Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel
نویسندگان
چکیده
منابع مشابه
Characteristics of P- and N-Channel Poly-Si/Si1 xGex/Si Sandwiched Conductivity Modulated Thin-Film Transistors
Both pand n-channel poly-Si/Si1 Ge /Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si1 Ge /Si sandwiched structure as the active layer to avoid the poor interface between the gate oxide and the poly-Si1 Ge material. Also an offset region placed between the channel and the drain is used to reduc...
متن کاملNear-infrared femtosecond laser crystallized poly-Si thin film transistors.
Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those o...
متن کاملHigh-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current–voltage characteristics as compared with the conventional solid-phase crystallized...
متن کاملEffects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...
متن کاملA Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors
CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional process. On-off current ratios for both types of p...
متن کامل